BUP313D transistor datasheet
 
 


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BUP313D


SI N-IGBT transistor

Uce: 1000V
Uge: 20V
Ic: 32A
N: 200W
Ton/Toff: 115/470nS
Tmax: -
the BUP313D is a silicon IGBT transistor preferred for use in general purpose applications-integrated diode
Source: Jaeger electronic catalog...... [more]
Jaeger electronic catalog 1999
Picture: -
advanced information for BUP313D
OEM:Siemens AG
Package: TO-3P
datasheet (jpg):-
datasheet (pdf):-
complementary type:
-
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