IGBT Transistors data tables
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BUP313D


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BUP307D

BUP313D


SI N-IGBT transistor

TO-3P
Uce: 1000V
Uge: 20V
Ic: 32A
N: 200W
Ton/Toff: 115/470nS
Tmax: -
the BUP313D is a silicon IGBT transistor preferred for use in general purpose applications-integrated diode
Source:Jaeger electronic catalog 1999
Picture:-
Advanced Information for: BUP313D
OEM:Siemens AG
Package: TO-3P
datasheet (jpg):-
datasheet (pdf):-
complementary type:
-
similar type list:BUP307D
similar type search:-
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