IGBT Transistors data tables
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BUP307D

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BUP314D

BUP307D


SI N-IGBT transistor

TO-3P
Uce: 1200V
Uge: ±20V
Ic: 35A
N: 310W
F: -
Tmax: -
the BUP307D is a silicon IGBT transistor preferred for use in general purpose applications-integrated diode
Source:Jaeger electronic catalog 1999
Picture:-
Advanced Information for: BUP307D
OEM:Siemens AG
Package: TO-3P
datasheet (jpg):-
datasheet (pdf):-
complementary type:
-
similar type list:BUP314D
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