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BUP307


SI N-IGBT transistor
UCE 1200V
UGE ±20V
IC 35A
Ptot 310W
fT -
TJ 150°C
the BUP307 is a silicon IGBT transistor preferred for use in general purpose applications
Picture: -
Source: SH SIPMOS Halbleiter 1993...... [more]
SH SIPMOS Halbleiter 1993/94
Advanced Information for BUP307
OEM:Siemens AG
Package: TO-218AA
BUP307 datasheet (jpg):available
BUP307 datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:-
search a part:search

BUP307


SI N-IGBT transistor
UCE 1200V
UGE ±20V
IC 35A
Ptot 310W
fT -
TJ 150°C
the BUP307 is a silicon IGBT transistor preferred for use in general purpose applications
Picture: -
Source: SH SIPMOS Halbleiter 1993...... [more]
SH SIPMOS Halbleiter 1993/94
Advanced Information for BUP307
OEM:Siemens AG
Package: TO-218AA
BUP307 datasheet (jpg):available
BUP307 datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:-
search a part:search

BUP307


SI N-IGBT transistor
UCE 1200V
UGE ±20V
IC 35A
Ptot 310W
fT -
TJ 150°C
the BUP307 is a silicon IGBT transistor preferred for use in general purpose applications
Picture: -
Source: SH SIPMOS Halbleiter 1993...... [more]
SH SIPMOS Halbleiter 1993/94
Advanced Information for BUP307
OEM:Siemens AG
Package: TO-218AA
BUP307 datasheet (jpg):available
BUP307 datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:-
search a part:search