BUP306D transistor datasheet
 
 


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BUP306D


SI N-IGBT transistor

Uce: 1000V
Uge: ±20V
Ic: 21A
N: 165W
F: -
Tmax: -
the BUP306D is a silicon IGBT transistor preferred for use in general purpose applications-integrated diode
Source: Jaeger electronic catalog...... [more]
Jaeger electronic catalog 1999
Picture: -
advanced information for BUP306D
OEM:Siemens AG
Package: TO-3P
datasheet (jpg):-
datasheet (pdf):-
complementary type:
-
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