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availability of original type

BUP306D


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MGW12N120D

BUP306D


SI N-IGBT transistor

TO-3P
Uce: 1000V
Uge: ±20V
Ic: 21A
N: 165W
F: -
Tmax: -
the BUP306D is a silicon IGBT transistor preferred for use in general purpose applications-integrated diode
Source:Jaeger electronic catalog 1999
Picture:-
Advanced Information for: BUP306D
OEM:Siemens AG
Package: TO-3P
datasheet (jpg):-
datasheet (pdf):-
complementary type:
-
similar type list:MGW12N120D
similar type search:-
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