IGBT Transistors data tables
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BUP200D


SI N-IGBT transistor

TO-220AB
Uce: 1200V
Uge: ±20V
Ic: 3.5A
N: 50W
F: -
Tmax: 150°C
the BUP200D is a silicon IGBT transistor preferred for use in general purpose applications-integrated diode
Source:Jaeger electronic catalog 1999
Picture:-
Advanced Information for: BUP200D
OEM:Siemens AG
Package: TO-220AB
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datasheet (pdf):-
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