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BYG80B


si diode
GFX
UR 100V
IF 2.4A
- -
trr 25nS
UF / IF <0.67V/1A
TJ 175°C
the BYG80B is a silicon diode, U=100V, I=2.4A, applications: fast soft recovery controlled avalanche rectifier
marking code: 80BPH
Picture: -
Source: Philips Power Diodes 1999
Advanced Information for BYG80B
OEM:Philips Semi... [more]
Philips Semiconductors
Package: SOD106
BYG80B datasheet (jpg):available
BYG80B datasheet (pdf):available
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:search similar
search a part:search

BYG80B


si diode
GFX
UR 100V
IF 2.4A
- -
trr 25nS
UF / IF <0.67V/1A
TJ 175°C
the BYG80B is a silicon diode, U=100V, I=2.4A, applications: fast soft recovery controlled avalanche rectifier
marking code: 80BPH
Picture: -
Source: Philips Power Diodes 1999
Advanced Information for BYG80B
OEM:Philips Semi... [more]
Philips Semiconductors
Package: SOD106
BYG80B datasheet (jpg):available
BYG80B datasheet (pdf):available
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:search similar
search a part:search

BYG80B


si diode
GFX
UR 100V
IF 2.4A
- -
trr 25nS
UF / IF <0.67V/1A
TJ 175°C
the BYG80B is a silicon diode, U=100V, I=2.4A, applications: fast soft recovery controlled avalanche rectifier
marking code: 80BPH
Picture: -
Source: Philips Power Diodes 1999
Advanced Information for BYG80B
OEM:Philips Semi... [more]
Philips Semiconductors
Package: SOD106
BYG80B datasheet (jpg):available
BYG80B datasheet (pdf):available
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:search similar
search a part:search