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BYG60M


si diode
GFX
UR 1kV
IF 650mA
- -
trr 300nS
UF / IF <0.98V/1A
TJ 175°C
the BYG60M is a silicon diode, U=1000V, I=650mA, applications: fast soft recovery controlled avalanche rectifier
marking code: 60MPH
Picture: -
Source: Philips Power Diodes 1999
Advanced Information for BYG60M
OEM:Philips Semi... [more]
Philips Semiconductors
Package: SOD106
BYG60M datasheet (jpg):available
BYG60M datasheet (pdf):available
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:search similar
search a part:search

BYG60M


si diode
GFX
UR 1kV
IF 650mA
- -
trr 300nS
UF / IF <0.98V/1A
TJ 175°C
the BYG60M is a silicon diode, U=1000V, I=650mA, applications: fast soft recovery controlled avalanche rectifier
marking code: 60MPH
Picture: -
Source: Philips Power Diodes 1999
Advanced Information for BYG60M
OEM:Philips Semi... [more]
Philips Semiconductors
Package: SOD106
BYG60M datasheet (jpg):available
BYG60M datasheet (pdf):available
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:search similar
search a part:search

BYG60M


si diode
GFX
UR 1kV
IF 650mA
- -
trr 300nS
UF / IF <0.98V/1A
TJ 175°C
the BYG60M is a silicon diode, U=1000V, I=650mA, applications: fast soft recovery controlled avalanche rectifier
marking code: 60MPH
Picture: -
Source: Philips Power Diodes 1999
Advanced Information for BYG60M
OEM:Philips Semi... [more]
Philips Semiconductors
Package: SOD106
BYG60M datasheet (jpg):available
BYG60M datasheet (pdf):available
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:search similar
search a part:search