R
X
G
Page:

BYD77G


si diode
GFX
UR 400V
IF 1.85A
- -
trr 50nS
UF / IF <0.83V/1A
TJ 175°C
the BYD77G is an avalanche diode capable of absorbing reverse transient energy (eg. during flashover in a picture tube) with very low stored charge
Picture: -
Source: Philips Power Diodes 1999
Advanced Information for BYD77G
OEM:Philips Semi... [more]
Philips Semiconductors
Package: SOD87
BYD77G datasheet (jpg):available
BYD77G datasheet (pdf):available
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:search similar
search a part:search

BYD77G


si diode
GFX
UR 400V
IF 1.85A
- -
trr 50nS
UF / IF <0.83V/1A
TJ 175°C
the BYD77G is an avalanche diode capable of absorbing reverse transient energy (eg. during flashover in a picture tube) with very low stored charge
Picture: -
Source: Philips Power Diodes 1999
Advanced Information for BYD77G
OEM:Philips Semi... [more]
Philips Semiconductors
Package: SOD87
BYD77G datasheet (jpg):available
BYD77G datasheet (pdf):available
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:search similar
search a part:search

BYD77G


si diode
GFX
UR 400V
IF 1.85A
- -
trr 50nS
UF / IF <0.83V/1A
TJ 175°C
the BYD77G is an avalanche diode capable of absorbing reverse transient energy (eg. during flashover in a picture tube) with very low stored charge
Picture: -
Source: Philips Power Diodes 1999
Advanced Information for BYD77G
OEM:Philips Semi... [more]
Philips Semiconductors
Package: SOD87
BYD77G datasheet (jpg):available
BYD77G datasheet (pdf):available
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:search similar
search a part:search