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BAV10


si diode
GFX
UR 60V
IF 300mA
- -
trr 6nS
UF / IF <1V/200mA
TJ 200°C
the BAV10 is a silicon planar epitaxial ultra high speed and high conductance diode primarily intended for core gating in fast memory modules
Picture: -
Source: Va Valvo Handbuch Halblei...... [more]
Va Valvo Handbuch Halbleiterdioden 1971
Advanced Information for BAV10
OEM:Valvo GmbH
Package: DO-35
BAV10 datasheet (jpg):available
BAV10 datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:search similar
search a part:search

BAV10


si diode
GFX
UR 60V
IF 300mA
- -
trr 6nS
UF / IF <1V/200mA
TJ 200°C
the BAV10 is a silicon planar epitaxial ultra high speed and high conductance diode primarily intended for core gating in fast memory modules
Picture: -
Source: Va Valvo Handbuch Halblei...... [more]
Va Valvo Handbuch Halbleiterdioden 1971
Advanced Information for BAV10
OEM:Valvo GmbH
Package: DO-35
BAV10 datasheet (jpg):available
BAV10 datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:search similar
search a part:search

BAV10


si diode
GFX
UR 60V
IF 300mA
- -
trr 6nS
UF / IF <1V/200mA
TJ 200°C
the BAV10 is a silicon planar epitaxial ultra high speed and high conductance diode primarily intended for core gating in fast memory modules
Picture: -
Source: Va Valvo Handbuch Halblei...... [more]
Va Valvo Handbuch Halbleiterdioden 1971
Advanced Information for BAV10
OEM:Valvo GmbH
Package: DO-35
BAV10 datasheet (jpg):available
BAV10 datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:search similar
search a part:search