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1N4449 diode datasheet

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1N4449


si diode


DO-35
Umax: 75V
Imax: 300mA
N: 0.5W
Time: 4nS
Tmax: 200°C
the 1N4449 is a silicon epitaxial diode preferred for use in extrem fast switch applications
Source: Tf Telefunken Dioden 1985 and...... [more]
Tf Telefunken Dioden 1985 and 1988
Picture: -
advanced information for 1N4449

OEM:AEG Telefunken / Telefunken electronic
Package: DO-35
1N4449 datasheet (jpg):available
1N4449 datasheet (pdf):available
complementary type:
-
similar type list:
-
similar type search:search similar

1N4449


si diode


DO-35
Umax: 75V
Imax: -
N: 0.5W
Time: 4nS
- -
the 1N4449 is a silicon diode preferred for use in very fast switch applications
Source: Texas Instruments Halbleiter D...... [more]
Texas Instruments Halbleiter Datenbuch 68/69
Picture: -
advanced information for 1N4449

OEM:Texas Instruments
Package: DO-35
1N4449 datasheet (jpg):available
1N4449 datasheet (pdf):available
complementary type:
-
similar type list:
-
similar type search:search similar

1N4449


si diode


DO-35
Umax: 75V
Imax: 300mA
N: 0.5W
Time: 4nS
- -
the 1N4449 is a silicon diode preferred for use in fast switch applications
Source: Fairchild Diode Data Book 1978
Picture: -
advanced information for 1N4449

OEM:Fairchild Camera & Instrument Corp. USA
Package: DO-35
1N4449 datasheet (jpg):available
1N4449 datasheet (pdf):available
complementary type:
-
similar type list:
-
similar type search:search similar