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R2110


SI PNP transistor
GFX
UCE/UCB -40/-40V
IC -0.1A
hFE 100-600
Ptot 200mW
fT 200MHz
TJ 150°C
the R2110 is a silicon PNP transistor preferred for use in switching applications, bias resistor build in
Picture: -
Source: KSR2110
advanced information for R2110
OEM:Samsung Elec... [more]
Samsung Electronics CO. LTD.
Package: SOT-23
R2110 datasheet (jpg):-
R2110 datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:
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similar type search:-
search a part:search

R2110


SI PNP transistor
GFX
UCE/UCB -40/-40V
IC -0.1A
hFE 100-600
Ptot 200mW
fT 200MHz
TJ 150°C
the R2110 is a silicon PNP transistor preferred for use in switching applications, bias resistor build in
Picture: -
Source: KSR2110
advanced information for R2110
OEM:Samsung Elec... [more]
Samsung Electronics CO. LTD.
Package: SOT-23
R2110 datasheet (jpg):-
R2110 datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:-
search a part:search

R2110


SI PNP transistor
GFX
UCE/UCB -40/-40V
IC -0.1A
hFE 100-600
Ptot 200mW
fT 200MHz
TJ 150°C
the R2110 is a silicon PNP transistor preferred for use in switching applications, bias resistor build in
Picture: -
Source: KSR2110
advanced information for R2110
OEM:Samsung Elec... [more]
Samsung Electronics CO. LTD.
Package: SOT-23
R2110 datasheet (jpg):-
R2110 datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:-
search a part:search